US 12,243,747 B2
Methods of forming structures including vanadium boride and vanadium phosphide layers
Petro Deminskyi, Helsinki (FI); Charles Dezelah, Helsinki (FI); Jiyeon Kim, Phoenix, AZ (US); Giuseppe Alessio Verni, Ottignies (BE); Maart Van Druenen, Helsinki (FI); Qi Xie, Wilsele (BE); and Petri Räisänen, Gilbert, AZ (US)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Apr. 21, 2021, as Appl. No. 17/235,985.
Claims priority of provisional application 63/015,387, filed on Apr. 24, 2020.
Prior Publication US 2021/0335612 A1, Oct. 28, 2021
Int. Cl. H01L 21/28 (2006.01); C23C 16/38 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); H01L 29/49 (2006.01)
CPC H01L 21/28088 (2013.01) [C23C 16/38 (2013.01); C23C 16/45525 (2013.01); C23C 16/50 (2013.01); H01L 29/4966 (2013.01)] 28 Claims
OG exemplary drawing
 
1. A method of forming a layer comprising vanadium boride, the method comprising the steps of:
providing a substrate within a reaction chamber of a reactor; and
using a deposition process, depositing the layer comprising vanadium boride onto a surface of the substrate,
wherein the deposition process comprises:
providing a vanadium precursor to the reaction chamber; and
providing a boron reactant to the reaction chamber;
wherein the boron reactant comprises one or more of a borane, a borohydride, a boron halide, an alkyl boron compound, an amino boron compound, an amido boron compound, a compound comprising one or more borane adducts, a compound comprising one or more borohydride adducts, and mixed substituted boron compounds.