US 12,243,746 B2
Method for stripping gallium nitride substrate
Fen Guo, Jiangsu (CN); Kang Su, Jiangsu (CN); Hongtao Man, Jiangsu (CN); and Tuo Li, Jiangsu (CN)
Assigned to SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD., Jiangsu (CN)
Appl. No. 18/697,445
Filed by SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD., Jiangsu (CN)
PCT Filed Sep. 29, 2022, PCT No. PCT/CN2022/122735
§ 371(c)(1), (2) Date Mar. 29, 2024,
PCT Pub. No. WO2023/159951, PCT Pub. Date Aug. 31, 2023.
Claims priority of application No. 202210159444.4 (CN), filed on Feb. 22, 2022.
Prior Publication US 2024/0332021 A1, Oct. 3, 2024
Int. Cl. H01L 21/268 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); C30B 33/04 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01)
CPC H01L 21/268 (2013.01) [C30B 25/20 (2013.01); C30B 29/406 (2013.01); C30B 33/04 (2013.01); H01L 21/02389 (2013.01); H01L 21/0254 (2013.01); H01L 21/3043 (2013.01); H01L 21/30625 (2013.01); H01L 29/66462 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for stripping a gallium nitride substrate, comprising:
acquiring a gallium nitride substrate with a gallium nitride epitaxial structure directly grown on an upper surface thereof;
scanning and irradiating an interior of the gallium nitride substrate via the gallium nitride epitaxial structure by a laser beam, so as to generate a decomposition layer in the gallium nitride substrate, the laser beam being a laser having a pulse width on the order of less than 10−15s, and a distance between the decomposition layer and the upper surface of the gallium nitride substrate being less than a thickness of the gallium nitride substrate; and
separating the gallium nitride substrate at the decomposition layer, so as to obtain a stripped gallium nitride substrate and a semiconductor device,
wherein before scanning and irradiating the interior of the gallium nitride substrate via the gallium nitride epitaxial structure by the laser beam, the method further comprises:
grooving the gallium nitride epitaxial structure and the gallium nitride substrate by a laser grooving technique to form grooves, depths of the grooves being equal to the distance between the decomposition layer and the upper surface of the gallium nitride epitaxial structure.