US 12,243,744 B2
Method for forming semiconductor structure
Yu-Chen Chang, Hsinchu (TW); Chien-Wen Lai, Hsinchu (TW); and Chih-Min Hsiao, Taoyuan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 12, 2023, as Appl. No. 18/333,100.
Application 18/333,100 is a continuation of application No. 17/378,419, filed on Jul. 16, 2021, granted, now 11,715,638.
Prior Publication US 2023/0326756 A1, Oct. 12, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/0337 (2013.01) [H01L 21/3086 (2013.01); H01L 21/31051 (2013.01); H01L 21/31144 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, comprising:
forming first mandrels over a target layer;
forming a first opening to cut off one of the first mandrels;
forming a spacer layer over the first mandrels;
forming second mandrels over the spacer layer and between the first mandrels;
forming a second opening to cut off one of the second mandrels;
etching the spacer layer; and
etching the target layer,
wherein a top surface of the spacer layer in the first opening is higher than a top surface of the spacer layer between the first mandrels.