US 12,243,742 B2
Method for processing a substrate
Seunghyun Lee, Seoul (KR); Hyunchul Kim, Hwaseong-si (KR); Seungwoo Choi, Hwaseong-si (KR); and Yeahyun Gu, Hwaseong-si (KR)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Apr. 16, 2021, as Appl. No. 17/233,382.
Claims priority of provisional application 63/013,517, filed on Apr. 21, 2020.
Prior Publication US 2021/0327714 A1, Oct. 21, 2021
Int. Cl. H01L 21/033 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/0332 (2013.01) [H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for adjusting a film stress comprising:
loading a substrate onto a substrate support in a reaction space;
forming a first film on the substrate in a first step comprising:
supplying a first reactant during a first period to the reaction space; and
supplying a second reactant to the reaction space,
wherein during the first step, the first reactant is dissociated by a plasma within the reaction space from the second reactant during a second period to form the first film from dissociated fragments of the first reactant that are adsorbed onto the substrate, wherein the first period and the second period do not overlap; and
converting the first film into a second film by supplying a third reactant to the first film in a second step, wherein the cycle ratio of the first step to the second step is larger than 5 to adjust the stress of the second film.