US 12,243,741 B2
Semiconductor structure and method for forming the same
Johnny Chiahao Li, Hsinchu (TW); Shih-Ming Chang, Hsinchu County (TW); Ken-Hsien Hsieh, Taipei (TW); Chi-Yu Lu, New Taipei (TW); Yung-Chen Chien, Kaohsiung (TW); Hui-Zhong Zhuang, Kaohsiung (TW); Jerry Chang Jui Kao, Taipei (TW); and Xiangdong Chen, San Diego, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Feb. 17, 2022, as Appl. No. 17/674,674.
Prior Publication US 2023/0260786 A1, Aug. 17, 2023
Int. Cl. H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01)
CPC H01L 21/027 (2013.01) [H01L 21/02697 (2013.01); H01L 21/30604 (2013.01); H01L 21/762 (2013.01); H01L 23/49827 (2013.01); H01L 23/522 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, comprising:
forming a first conductive line over a substrate;
forming a conductive member over the first conductive line;
forming a second conductive line over the first conductive line and the conductive member, wherein the second conductive line has a second surface overlapping and conformal to a first surface of the first conductive line; and
removing a portion of the conductive member exposed by the second conductive line to form a conductive via extending between the first conductive line and the second conductive line,
wherein the formation of the second conductive line is implemented prior to the removal of the portion of the conductive member and the formation of the conductive via,
after the conductive via is formed, the first surface is in contact with a first end of the conductive via, and the second surface is in contact with a second end of the conductive via, and an area of the second surface of the second conductive line is greater than an area of the second end of the conductive via.