| CPC H01J 37/32568 (2013.01) [H01J 37/32577 (2013.01); H01J 37/32642 (2013.01); H01J 37/32715 (2013.01); H01J 37/32082 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/334 (2013.01)] | 3 Claims |

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1. A plasma processing apparatus comprising:
a chamber;
an electrostatic chuck including a first region on which a substrate is placed and a second region on which an edge ring is placed, the first region including a first electrode provided therein, and the second region including a second electrode provided therein;
a base on which the electrostatic chuck is provided;
a feed pipe provided to transmit radio-frequency power to the base and extending in a vertical direction below the base;
a first feed line that connects the first electrode and a bias power supply generating a pulse of a voltage applied to the first electrode to each other; and
a second feed line that connects the second electrode and the bias power supply or another bias power supply generating a pulse of the voltage applied to the second electrode to each other, wherein
the second feed line includes a plurality of sockets and a plurality of feed pins,
the plurality of feed pins have flexibility in a radial direction thereof and are fitted into the plurality of sockets,
the second feed line includes
a common line, and
a plurality of branch lines that are branched from the common line and connected to the second electrode,
each of the plurality of branch lines includes one of the plurality of sockets and one of the plurality of feed pins,
the common line and the first feed line extend upward through an inner hole of the feed pipe,
the second feed line includes an annular member having conductivity,
the common line is connected to the annular member,
the first feed line extends upward through an inner hole of the annular member, and
the plurality of branch lines are connected between the annular member and the second electrode, and extend in a radial direction from the annular member.
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