US 12,243,719 B2
Gas distribution ring for process chamber
Po-Hsiang Wang, New Taipei (TW); Min-Chang Ching, Zhubei (TW); Kuo Liang Lu, Hsinchu (TW); and Bo-Han Chu, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 28, 2022, as Appl. No. 17/851,385.
Prior Publication US 2023/0420222 A1, Dec. 28, 2023
Int. Cl. H01J 37/32 (2006.01); C23C 16/455 (2006.01)
CPC H01J 37/3244 (2013.01) [C23C 16/4558 (2013.01); H01J 37/32495 (2013.01); H01J 2237/006 (2013.01); H01J 2237/0203 (2013.01); H01J 2237/0268 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming an integrated chip processing tool, comprising:
providing an upper ring and a lower ring, wherein the lower ring has a first diameter extending between one or more interior sidewalls of the lower ring that face one another, and the upper ring has a second diameter extending between one or more interior sidewalls of the upper ring that face one another, the second diameter being smaller than the first diameter;
forming a plurality of gas inlets within a bottom surface of the lower ring;
forming a plurality of gas conveyance channels within an upper surface of the lower ring and directly over the plurality of gas inlets, wherein the plurality of gas conveyance channels terminate at a plurality of gas outlets disposed at opposing ends of the plurality of gas conveyance channels; and
bonding a lower surface of the upper ring to the upper surface of the lower ring.