US 12,243,707 B2
Repellent electrode for electron repelling
Ching-Heng Yen, Hsinchu (TW); Jen-Chung Chiu, Hsinchu (TW); Tai-Kun Kao, Hsinchu (TW); Lu-Hsun Lin, Hsinchu (TW); and Tsung-Min Lin, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 10, 2023, as Appl. No. 18/448,026.
Application 18/448,026 is a continuation of application No. 17/693,103, filed on Mar. 11, 2022, granted, now 11,830,700.
Application 17/693,103 is a continuation of application No. 16/698,072, filed on Nov. 27, 2019, granted, now 11,295,926, issued on Apr. 5, 2022.
Claims priority of provisional application 62/772,424, filed on Nov. 28, 2018.
Prior Publication US 2023/0386778 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/08 (2006.01); H01J 37/317 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/08 (2013.01) [H01J 37/3171 (2013.01); H01J 37/32541 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An ion source, comprising:
a source arc chamber having a conductive first end wall, a conductive second end wall, and a conductive sidewall defining an inner chamber space;
a repellent electrode positioned in the inner chamber space and secured to the first end wall through a shaft element of an insulator material, the repellent electrode including a repellent surface that includes a substantially polygonal shape and rounded vertices; and
a cathode positioned in the inner chamber space and secured to one or more of the conductive second end wall or the conductive sidewall.