US 12,243,681 B2
Programmable inductor and methods of manufacture
Chen-Hua Yu, Hsinchu (TW); Mirng-Ji Lii, Sinpu Township (TW); Hao-Yi Tsai, Hsinchu (TW); Hsien-Wei Chen, Hsinchu (TW); Hung-Yi Kuo, Taipei (TW); and Nien-Fang Wu, Chiayi (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 27, 2023, as Appl. No. 18/360,571.
Application 18/360,571 is a division of application No. 16/390,784, filed on Apr. 22, 2019, granted, now 11,756,731.
Application 16/390,784 is a continuation of application No. 13/832,964, filed on Mar. 15, 2013, granted, now 10,269,489, issued on Apr. 23, 2019.
Prior Publication US 2023/0368972 A1, Nov. 16, 2023
Int. Cl. H01F 41/04 (2006.01); H01F 17/00 (2006.01); H01L 23/522 (2006.01); H01L 23/525 (2006.01)
CPC H01F 41/045 (2013.01) [H01F 17/0006 (2013.01); H01F 41/042 (2013.01); H01L 23/5227 (2013.01); H01L 23/5256 (2013.01); H01F 2017/0046 (2013.01); Y10T 29/4902 (2015.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first conductive turn in physical contact with a first via and a second via; and
forming a second conductive turn in physical contact with a third via and a fourth via, wherein the first conductive turn and the second conductive turn are individually connected to two fuses, wherein a first one of the two fuses is misaligned from a second one of the two fuses, wherein the first via is adjacent to a first plurality of vias in physical contact with the first conductive turn, wherein the second via is adjacent to a second plurality of vias in physical contact with the first conductive turn, and wherein the third via is adjacent to a third plurality of vias in physical contact with the second conductive turn.