US 12,243,595 B2
Solid-state drive controller and circuit controller
Yen-Chung Chen, Hsinchu (TW)
Assigned to REALTEK SEMICONDUCTOR CORPORATION, Hsinchu (TW)
Filed by REALTEK SEMICONDUCTOR CORPORATION, Hsinchu (TW)
Filed on Feb. 1, 2023, as Appl. No. 18/104,679.
Claims priority of application No. 111119552 (TW), filed on May 25, 2022.
Prior Publication US 2023/0386582 A1, Nov. 30, 2023
Int. Cl. G11C 16/30 (2006.01); G06F 3/06 (2006.01)
CPC G11C 16/30 (2013.01) [G06F 3/0653 (2013.01); G06F 3/0679 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A solid-state drive (SSD) controller capable of determining whether M supply voltage(s) supplied to a NAND flash memory is correct, the SSD controller comprising:
a voltage detector configured to receive the M supply voltage(s) and thereby generate a detection result, wherein the M is a positive integer;
a voltage inquiry module configured to output an inquiry signal to the NAND flash memory and thereby receive a response signal from the NAND flash memory, and the voltage inquiry module further configured to generate an inquiry result according to the response signal, wherein the inquiry result indicates M specified supply voltage(s) applicable to the NAND flash memory; and
a voltage decision module configured to receive the detection result and the inquiry result, and further configured to determine whether the M supply voltage(s) is/are equivalent to the M specified voltage(s) according to the detection result and the inquiry result and thereby generate a decision result,
wherein the response signal includes at least one of following:
an identification (ID) of the NAND flash memory, which allows the voltage inquiry module to search prestored data according to the ID to find out the M specified supply voltage(s) applicable to the NAND flash memory and thereby generate the inquiry result; and
at least one parameter including data retrieved from a storage component of the NAND flash memory, which allows the voltage inquiry module to analyze the at least one parameter to find out the M specified supply voltage(s) applicable to the NAND flash memory and thereby generate the inquiry result.