US 12,243,580 B2
Fin field effect transistor sense amplifier circuitry and related apparatuses and computing systems
Yuan He, Boise, ID (US); and Fatma Arzum Simsek-Ege, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 29, 2022, as Appl. No. 17/936,760.
Prior Publication US 2024/0112724 A1, Apr. 4, 2024
Int. Cl. G11C 11/00 (2006.01); G11C 11/4091 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01)
CPC G11C 11/4091 (2013.01) [H01L 25/0657 (2013.01); H01L 25/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a pull-up sense amplifier comprising P-type fin field effect transistors (FinFETs) having a first threshold voltage potential associated therewith;
a pull-down sense amplifier comprising N-type FinFETs having a second threshold voltage potential associated therewith, the second threshold voltage potential substantially equal to the first threshold voltage potential;
column select gates;
global input-output (GIO) lines electrically connected to the pull-up sense amplifier and the pull-down sense amplifier through the column select gates;
GIO pre-charge circuitry configured to pre-charge the GIO lines to a low power supply voltage potential;
local input/output (LIO) lines; and
LIO circuitry configured to pre-charge the LIO lines to a pre-charge voltage potential substantially halfway between the low power supply voltage potential and a high power supply voltage potential.