US 12,243,577 B2
Automated voltage demarcation (VDM) adjustment for memory device
Yi-Min Lin, San Jose, CA (US); Fangfang Zhu, San Jose, CA (US); and Chih-Kuo Kao, Fremont, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed on Sep. 5, 2023, as Appl. No. 18/242,155.
Application 18/242,155 is a division of application No. 17/463,274, filed on Aug. 31, 2021, granted, now 11,798,614.
Prior Publication US 2023/0410878 A1, Dec. 21, 2023
Int. Cl. G11C 11/4074 (2006.01); G11C 11/4076 (2006.01); G11C 11/4096 (2006.01); G11C 29/42 (2006.01)
CPC G11C 11/4074 (2013.01) [G11C 11/4076 (2013.01); G11C 11/4096 (2013.01); G11C 29/42 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device;
a processing device, operatively coupled to the memory device, the processing device configured to:
receive a plurality of codewords;
determine that one or more codewords of the plurality of codewords are corrupt;
select a first read voltage associated with the one or more codewords, wherein the first read voltage is based on a time elapsed since a last write operation with respect to a management unit comprising the one or more codewords and a second read voltage utilized for reading the one or more codewords in a previous read operation; and
apply the first read voltage to a set of memory cells storing the one or more codewords.