US 12,243,574 B2
Content addressable memory device and operating method thereof
Woo Young Choi, Seoul (KR)
Assigned to SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR); and SOGANG UNIVERSITY RESEARCH & BUSINESS DEVELOPMENT FOUNDATION, Seoul (KR)
Filed by SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR); and Sogang University Research & Business Development Foundation, Seoul (KR)
Filed on Aug. 23, 2022, as Appl. No. 17/893,646.
Claims priority of application No. 10-2021-0111470 (KR), filed on Aug. 24, 2021; and application No. 10-2022-0104120 (KR), filed on Aug. 19, 2022.
Prior Publication US 2023/0063076 A1, Mar. 2, 2023
Int. Cl. G11C 15/04 (2006.01); G11C 11/22 (2006.01); G11C 11/56 (2006.01)
CPC G11C 11/2253 (2013.01) [G11C 11/5657 (2013.01); G11C 15/04 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A content addressable memory (CAM) device comprising:
a memory cell array including a plurality of memory cells, each of which has a ferroelectric tunnel field effect transistor (FeTFET);
a driver configured to provide a codeword to the memory cell array through a plurality of search lines; and
a match amplifier connected to the plurality of memory cells through a plurality of match lines,
wherein each of the plurality of memory cells is connected to a first search line among the plurality of search lines,
wherein the FeTFET includes,
a first doped region having a first conductivity type,
a second doped region having a second conductivity type different from the first conductivity type,
a channel region between the first doped region and the second doped region, and
a gate on the channel region and including a ferroelectric layer,
a first delta doped region having the second conductivity type, the first delta doped region being between the first doped region and the channel region, and
a second delta doped region having the first conductivity type, the second delta doped region being between the second doped region and the channel region, and
wherein the gate is connected to the first search line, and one of the first doped region and the second doped region is connected to a first match line among the plurality of match lines.