US 12,243,572 B2
Magnetic memory device
Masatoshi Yoshikawa, Tokyo (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 6, 2023, as Appl. No. 18/178,993.
Claims priority of application No. 2022-138459 (JP), filed on Aug. 31, 2022.
Prior Publication US 2024/0079039 A1, Mar. 7, 2024
Int. Cl. G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC G11C 11/161 (2013.01) [G11C 11/1675 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic memory device comprising:
a first conductive layer;
a second conductive layer;
a third conductive layer extending in a first direction; and
a 3-terminal type memory cell coupled to the first conductive layer, the second conductive layer, and the third conductive layer, wherein
the memory cell includes:
a fourth conductive layer extending in the first direction; and
a magnetoresistance effect element provided between the fourth conductive layer and the third conductive layer,
the magnetoresistance effect element includes:
a first ferromagnetic layer in contact with the fourth conductive layer in a second direction intersecting with the first direction;
a second ferromagnetic layer provided in an opposite side of the fourth conductive layer with respect to the first ferromagnetic layer;
a dielectric layer between the first ferromagnetic layer and the second ferromagnetic layer;
a third ferromagnetic layer provided in an opposite side of the first ferromagnetic layer with respect to the second ferromagnetic layer; and
a nonmagnetic layer provided between the second ferromagnetic layer and the third ferromagnetic layer and containing oxygen (O) and magnesium (Mg), and
a concentration of a noble metal contained in the first ferromagnetic layer is higher than a concentration of the noble metal contained in the second ferromagnetic layer.