US 12,243,456 B2
Organic light-emitting diode display device performing a sensing operation, and method of sensing degradation of an organic light-emitting diode display device
Kihyun Pyun, Gwangmyeong-si (KR); and Siduk Sung, Hwaseong-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed on Nov. 29, 2022, as Appl. No. 18/059,721.
Application 18/059,721 is a continuation of application No. 17/211,370, filed on Mar. 24, 2021, granted, now 11,551,593.
Claims priority of application No. 10-2020-0084743 (KR), filed on Jul. 9, 2020.
Prior Publication US 2023/0110937 A1, Apr. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G09G 3/32 (2016.01); G09G 3/00 (2006.01); G09G 3/3283 (2016.01)
CPC G09G 3/006 (2013.01) [G09G 3/3283 (2013.01); G09G 2310/061 (2013.01); G09G 2320/048 (2013.01); G09G 2330/027 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A display device comprising:
a display panel including pixels, the pixels being grouped into pixel blocks;
a memory configured to store first accumulated degradation information for each of the pixel blocks up to a first driving period;
a controller configured to obtain degradation information for each of the pixel blocks in a second driving period, obtain second accumulated degradation information for each of the pixel blocks up to the second driving period based on the degradation information and the first accumulated degradation information in response to a power control signal indicating a power-off, and determine in parallel whether a transistor sensing operation is to be performed and whether a diode sensing operation is to be performed for a respective pixel block of the pixel blocks based on the second accumulated degradation information; and
a sensing circuit configured to selectively perform the determined transistor sensing operation and the determined diode sensing operation for the respective pixel block,
wherein the first accumulated degradation information for the respective pixel block on which the determined transistor sensing operation and the determined diode sensing operation are selectively performed indicates an initial degradation amount in a third driving period.