| CPC G06F 3/0659 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01); G06F 11/1068 (2013.01); G06F 13/4027 (2013.01); G06F 13/4282 (2013.01); G06F 16/188 (2019.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); G06F 2213/0026 (2013.01); H01L 2225/06541 (2013.01)] | 40 Claims |

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1. A memory module, comprising:
an internal bus;
a first memory-mapped device coupled to the internal bus, the first memory-mapped device comprising a controller and a plurality of memory circuits, the controller and the memory circuits each being provided on a semiconductor die, each semiconductor die being bonded to another one of the semiconductor dies, wherein each memory circuit comprises (i) one or more three-dimensional memory arrays; and (ii) a plurality of interconnect conductors which communicate data and control signals between the controller and the memory circuit, such data and control signals being associated operations of the memory circuit; and
a second memory-mapped device coupled to the internal bus bus, wherein the internal bus communicates data and control signals between the controller and the second memory-mapped device, such data and control signals being associated with the operations of the second memory-mapped device.
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