US 12,242,756 B2
Tri-state electrical information storage
Mitchell Miller, Mission (CA)
Assigned to Atlas Power Technologies Inc., Abbotsford (CA)
Filed by Atlas Power Technologies Inc., Abbotsford (CA)
Filed on Feb. 12, 2024, as Appl. No. 18/438,807.
Application 18/438,807 is a continuation of application No. 17/424,737, granted, now 11,954,355, previously published as PCT/CA2020/050053, filed on Jan. 17, 2020.
Claims priority of application No. 3030723 (CA), filed on Jan. 21, 2019.
Prior Publication US 2024/0248638 A1, Jul. 25, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01); G11C 11/56 (2006.01)
CPC G06F 3/0655 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01); G11C 11/5642 (2013.01); G11C 11/565 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory cell for storing data, comprising:
one or more word lines;
two bit lines; and
one or more components for storing information therein, the one or more components connected as a circuit between the one or more word lines and the two bit lines, the one or more components comprising:
a first transistor and either an electrostatic storage device or a capacitor;
multiple second transistors; or
an electromagnetic storage device or an electromagnetic storage medium;
wherein information is written to the memory cell by receiving a signal on the one or more word lines and a voltage across the two bit lines, to cause the memory cell to assume:
a first information-representing state when subjected to a positive polarity,
a second information-representing state when subjected to a neutral polarity, and
a third information-representing state when subjected to a negative polarity;
wherein said information-representing states are detectable via the one or more word lines and the two bit lines.