US 12,242,204 B2
Substrate support, lithographic apparatus, method for manipulating charge distribution and method for preparing a substrate
Ruud Antonius Catharina Maria Beerens, Roggel (NL); Koen Gerhardus Winkels, Schijndel (NL); Dirk Willem Harberts, Eindhoven (NL); Lucas Henricus Johannes Stevens, Eindhoven (NL); Dennis Dominic Van Der Voort, Best (NL); Edwin Johannes Cornelis Bos, Dommelen (NL); George Alois Leonie Leenknegt, Waalre (NL); and Nicolaas Ten Kate, Almkerk (NL)
Assigned to ASML NETHERLANDS B.V., Veldhoven (NL)
Appl. No. 17/775,361
Filed by ASML NETHERLANDS B.V., Veldhoven (NL)
PCT Filed Oct. 16, 2020, PCT No. PCT/EP2020/079297
§ 371(c)(1), (2) Date May 9, 2022,
PCT Pub. No. WO2021/094057, PCT Pub. Date May 20, 2021.
Claims priority of application No. 19209256 (EP), filed on Nov. 14, 2019.
Prior Publication US 2022/0390850 A1, Dec. 8, 2022
Int. Cl. G03F 7/20 (2006.01); G03F 7/00 (2006.01); H01L 21/67 (2006.01); H01L 21/687 (2006.01)
CPC G03F 7/707 (2013.01) [G03F 7/20 (2013.01); G03F 7/70941 (2013.01); H01L 21/67034 (2013.01); H01L 21/6875 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate support configured to support a substrate, the substrate support comprising:
a plurality of burls protruding from a base surface of the substrate support, the burls having distal ends for supporting a lower surface of the substrate with a gap between the base surface of the substrate support and the lower surface of the substrate;
a liquid supply channel configured to supply a conductive liquid to the gap so as to bridge the gap between the base surface of the substrate support and the lower surface of the substrate, to allow charge to pass between the substrate support and the substrate; and
a gas supply channel configured to supply gas to the gap so as to displace conductive liquid from the gap and dry the substrate, and/or one or more extraction channels, located at the gap, configured to extract gas and/or liquid from the gap,
wherein the substrate support is configured to have a controlled electrical potential such that charge distribution at the lower surface of the substrate can be manipulated.