US 12,242,201 B2
Determining hot spot ranking based on wafer measurement
Youping Zhang, Cupertino, CA (US); Weixuan Hu, Shenzhen (CN); Fei Yan, Shenzhen (CN); Wei Peng, Shenzhen (CN); and Vivek Kumar Jain, Fremont, CA (US)
Assigned to ASML NETHERLANDS B.V., Veldhoven (NL)
Appl. No. 17/276,533
Filed by ASML NETHERLANDS B.V., Veldhoven (NL)
PCT Filed Sep. 20, 2019, PCT No. PCT/EP2019/075326
§ 371(c)(1), (2) Date Mar. 16, 2021,
PCT Pub. No. WO2020/064544, PCT Pub. Date Apr. 2, 2020.
Claims priority of provisional application 62/738,775, filed on Sep. 28, 2018.
Prior Publication US 2022/0035256 A1, Feb. 3, 2022
Int. Cl. G03F 7/00 (2006.01)
CPC G03F 7/70525 (2013.01) [G03F 7/70641 (2013.01); G03F 7/7065 (2013.01); G03F 7/7085 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method comprising:
obtaining (i) a set of hot spots of a patterning process, (ii) measured values of one or more parameters of the patterning process corresponding to the set of hot spots, and (iii) simulated values of the one or more parameters of the patterning process corresponding to the set of hot spots;
determining, via a hardware computer system, a measurement feedback based on the measured values and the simulated values of the one or more parameters of the patterning process; and
determining, via computer simulation using a process model of the patterning process, a ranking of a hot spot within the set of hot spots based on the measurement feedback.