US 12,242,198 B2
Photoresist stripping composition
Xin Jiang, Shanghai (CN); and Stephen W. King, Braselton, GA (US)
Assigned to Dow Global Technologies LLC, Midland, MI (US)
Appl. No. 17/634,071
Filed by Dow Global Technologies LLC, Midland, MI (US)
PCT Filed Aug. 30, 2019, PCT No. PCT/CN2019/103614
§ 371(c)(1), (2) Date Feb. 9, 2022,
PCT Pub. No. WO2021/035673, PCT Pub. Date Mar. 4, 2021.
Prior Publication US 2022/0365440 A1, Nov. 17, 2022
Int. Cl. C11D 3/26 (2006.01); B08B 3/04 (2006.01); C07C 217/08 (2006.01); C11D 3/30 (2006.01); C11D 7/32 (2006.01); G03F 7/42 (2006.01)
CPC G03F 7/425 (2013.01) [C07C 217/08 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method of stripping a photoresist, comprising:
(1) providing a substrate having a photoresist wherein the substrate is selected from the group consisting of a semiconductor wafer, a printed wire board, an OLED display and a liquid crystal display;
(2) spraying a photoresist stripping composition onto the substrate or dipping the substrate into a photoresist stripping composition, wherein the photoresist stripping composition comprises an organic amine having the following formula (1):

OG Complex Work Unit Chemistry
wherein
R is hydrogen or an alkyl group having 1 to 12 carbons, R1 is an alkylene group having 1 to 12 carbons, and R2 is an alkyl group having 1 to 12 carbons.