US 12,242,196 B2
Resist underlayer film-forming composition containing indolocarbazole novolak resin
Hikaru Tokunaga, Toyama (JP); Daigo Saito, Toyama (JP); Keisuke Hashimoto, Toyama (JP); and Rikimaru Sakamoto, Toyama (JP)
Assigned to NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo (JP)
Filed by NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo (JP)
Filed on Jun. 9, 2023, as Appl. No. 18/207,934.
Application 17/880,761 is a division of application No. 15/780,657, abandoned, previously published as PCT/JP2016/085561, filed on Nov. 30, 2016.
Application 18/207,934 is a continuation of application No. 17/880,761, filed on Aug. 4, 2022, granted, now 11,720,024.
Claims priority of application No. 2015-235002 (JP), filed on Dec. 1, 2015.
Prior Publication US 2023/0324802 A1, Oct. 12, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/11 (2006.01); C08G 12/26 (2006.01); C08G 16/02 (2006.01); C09D 161/26 (2006.01); G03F 7/20 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/11 (2013.01) [C08G 12/26 (2013.01); C08G 16/0268 (2013.01); C09D 161/26 (2013.01); G03F 7/2002 (2013.01); G03F 7/2059 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01)] 4 Claims
 
1. A resist underlayer film containing a polymer consisting of a unit structure of the following formula (1):

OG Complex Work Unit Chemistry
wherein A is a divalent group having an indolocarbazole structure having at least two amino groups, wherein the divalent group is derived from a compound having a condensed ring structure and an aromatic group substituent in place of a hydrogen atom on the condensed ring; B1 and B2 are together formed from diaryl ketone or alkylaryl ketone such that B1 and B2 are each an aryl group or an alkyl group with at least one of B1 and B2 being an aryl group, with B1 and B2 being bonded to each other by a carbon atom from the ketone,
wherein when the resist underlayer film spin coated on a silicon wafer from a solution containing 1.0 g of the polymer and 9.24 g of at least one solvent and then is baked at 300° C. for 180 seconds to form a layer having a thickness of 0.05 μm, an amount of sublimate generated during the baking of the resist underlayer film is 301 ng or less, and
wherein the diaryl ketone or the alkylaryl ketone is selected from the group consisting of diphenyl ketone, phenyl naphthyl ketone, dinaphthyl ketone, phenyl tolyl ketone, ditolyl ketone, and methylphenyl ketone.