US 12,242,189 B2
Semiconductor photoresist composition, method for preparing thereof and method of forming patterns using the composition
Kyungsoo Moon, Suwon-si (KR)
Assigned to Samsung SDI Co., Ltd., Yongin-si (KR)
Filed by Samsung SDI Co., Ltd., Yongin-si (KR)
Filed on Nov. 10, 2021, as Appl. No. 17/454,447.
Claims priority of application No. 10-2020-0178616 (KR), filed on Dec. 18, 2020.
Prior Publication US 2022/0194968 A1, Jun. 23, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/004 (2006.01); C07F 7/22 (2006.01); G03F 7/20 (2006.01); G03F 7/40 (2006.01)
CPC G03F 7/0042 (2013.01) [C07F 7/2224 (2013.01); G03F 7/2004 (2013.01); G03F 7/40 (2013.01)] 18 Claims
 
1. A semiconductor photoresist composition, comprising:
an organotin compound represented by Chemical Formula 1, and a solvent:

OG Complex Work Unit Chemistry
and
wherein, in Chemical Formula 1,
R1 to R3 are each independently a substituted or unsubstituted C1 to C20 alkyl group, and
Ra, Rb, and Rc are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted of unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, or a substituted or unsubstituted C6 to C30 aryl group.
 
5. A method for preparing a semiconductor photoresist composition, the method comprising:
reacting an organotin compound represented by Chemical Formula 2 with an organic compound represented by Chemical Formula 3 in an organic solvent to prepare an organotin compound represented by Chemical Formula 1, and
mixing the organotin compound represented by Chemical Formula 1 with the organic solvent;

OG Complex Work Unit Chemistry
and
wherein, in Chemical Formula 2 and Chemical Formula 3, R1 to R3 are each independently a substituted or unsubstituted C1 to C20 alkyl group,
R4 to R9 are each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, or a substituted or unsubstituted C6 to C30 aryl group, and
Rd is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group. a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, or a substituted or unsubstituted C6 to C30 aryl group;

OG Complex Work Unit Chemistry
and
wherein, in Chemical Formula 1,
R1 to R3 are each independently a substituted or unsubstituted C1 to C20 alkyl group, and
Ra, Rb, and Rc each independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, or a substituted or unsubstituted C6 to C30 aryl group.