| CPC G02F 1/025 (2013.01) [G02F 1/0151 (2021.01); G02F 1/0152 (2021.01); G02F 1/2257 (2013.01); G02F 1/212 (2021.01); G02F 2202/06 (2013.01); G02F 2202/101 (2013.01); G02F 2202/105 (2013.01); G02F 2203/50 (2013.01); H04B 10/2507 (2013.01)] | 20 Claims |

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1. An optical device comprising:
an optical waveguide comprising a first semiconductor material region and a second semiconductor material region defining a junction therebetween, wherein the junction is a PN junction formed at boundaries of the first semiconductor material region and the second semiconductor material region that contact each other;
an insulating layer formed on top of the optical waveguide; and
a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.
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