US 12,241,924 B2
Wafer metrology technologies
Viktor Koldiaev, Morgan Hill, CA (US); Marc Kryger, Fountain Valley, CA (US); and John Changala, Tustin, CA (US)
Assigned to FemtoMetrix, Inc., Los Angeles, CA (US)
Filed by FemtoMetrix, Inc., Irvine, CA (US)
Filed on Feb. 8, 2022, as Appl. No. 17/667,404.
Application 17/667,404 is a continuation of application No. 16/773,693, filed on Jan. 27, 2020, granted, now 11,293,965.
Application 16/773,693 is a continuation of application No. 15/806,271, filed on Nov. 7, 2017, granted, now 10,591,525, issued on Mar. 17, 2020.
Application 15/806,271 is a continuation of application No. 14/690,279, filed on Apr. 17, 2015, abandoned.
Claims priority of provisional application 61/980,860, filed on Apr. 17, 2014.
Prior Publication US 2022/0413029 A1, Dec. 29, 2022
Int. Cl. G01N 21/88 (2006.01); G01N 21/63 (2006.01); G01N 21/94 (2006.01); G01N 21/95 (2006.01); G01N 27/00 (2006.01); G01R 29/24 (2006.01); G01R 31/26 (2020.01); G01R 31/265 (2006.01); G01R 31/28 (2006.01); G01R 31/308 (2006.01); H01L 21/66 (2006.01)
CPC G01R 29/24 (2013.01) [G01N 21/636 (2013.01); G01N 21/8806 (2013.01); G01N 21/94 (2013.01); G01N 21/9501 (2013.01); G01N 27/00 (2013.01); G01R 31/2601 (2013.01); G01R 31/2656 (2013.01); G01R 31/2831 (2013.01); G01R 31/308 (2013.01); H01L 22/12 (2013.01); G01N 2201/06113 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A system for optically interrogating a surface, comprising:
a probe optical source configured to direct probing radiation to the surface;
a UV flash lamp configured to direct UV light to the surface;
at least one optical detector configured to detect second harmonic generated light produced by the probing radiation directed on the surface in the presence of the UV light;
a scanning stage configured to enable scanning said probing radiation across multiple locations on the surface; and
a controller configured to obtain second harmonic generation measurements from the second harmonic generated light detected by the at least one optical detector,
wherein said system is configured to be part of a semiconductor fabrication or production line,
wherein said controller is configured to obtain second harmonic generation measurements from the second harmonic generated light less than 10 seconds after applying the probing radiation.