US 12,241,823 B2
Methods for predicting critical caking cycle of crystal particle
Junbo Gong, Tianjin (CN); Mian Li, Quzhou (CN); Mingyang Chen, Shaoxing (CN); Wulong Yang, Quzhou (CN); Jiahui Li, Tianjin (CN); Mingxuan Li, Tianjin (CN); Qiang Wu, Quzhou (CN); Baohong Hou, Tianjin (CN); and Qiuxiang Yin, Tianjin (CN)
Assigned to TIANJIN UNIVERSITY, Tianjin (CN); ZHEJIANG HUAKANG PHARMACEUTICAL CO., LTD., Quzhou (CN); and ZHEJIANG INSTITUTE OF TIANJIN UNIVERSITY (SHAOXING), Shaoxing (CN)
Filed by TIANJIN UNIVERSITY, Tianjin (CN); ZHEJIANG HUAKANG PHARMACEUTICAL CO., LTD., Zhejiang (CN); and ZHEJIANG INSTITUTE OF TIANJIN UNIVERSITY (SHAOXING), Zhejiang (CN)
Filed on May 7, 2024, as Appl. No. 18/657,771.
Application 18/657,771 is a continuation of application No. PCT/CN2023/106203, filed on Jul. 6, 2023.
Claims priority of application No. 202211289850.9 (CN), filed on Oct. 20, 2022.
Prior Publication US 2024/0344954 A1, Oct. 17, 2024
Int. Cl. G01N 15/06 (2024.01)
CPC G01N 15/06 (2013.01) 6 Claims
OG exemplary drawing
 
1. A method for predicting a critical caking cycle of a crystal particle, wherein the method is executed by a processor, the method comprises:
establishing a CHS crystal bridge growth model database of a crystal particle with a same type of a crystal particle to be predicted, wherein the CHS crystal bridge growth model database includes: an equivalent particle radius corresponding to different particle size standards of the same type of crystal particles, a moisture absorption capacity of crystal particles with different equivalent particle radii under multiple ambient temperatures and multiple ambient humidity conditions, respectively, and reference critical caking cycles of the crystal particles with different equivalent particle radii under the multiple ambient temperatures and multiple humidity cycle conditions, respectively; wherein the CHS crystal bridge growth model includes at least one of a plurality of combinations of the different ambient temperatures and ambient humidity conditions and a plurality of combinations of the different ambient temperatures and humidity cycle conditions;
matching with the CHS crystal bridge growth model database based on an equivalent particle radius, an actual ambient temperature, and an actual humidity cycle condition of the crystal particle to be predicted, respectively, and calculating a critical caking cycle of the crystal particle to be predicted by selecting a corresponding preset algorithm according to a match result; wherein the preset algorithm includes a first preset algorithm and the second preset algorithm;
in response to matching the CHS crystal bridge growth model database based on the actual ambient temperature and the actual humidity cycle condition of the crystal particle to be predicted, obtaining a target same type of crystal particles with a same environmental temperature and humidity cycle condition as the actual environmental temperature and humidity cycle condition, respectively, and determining the critical caking cycle of the crystal particle to be predicted through the first preset algorithm according to equation (a):

OG Complex Work Unit Math
in the equation (a), R1e represents an equivalent particle radius of the target same type of crystal particles, R1e represents the equivalent particle radius of the crystal particle to be predicted, N1 represents a reference critical caking cycle of the target same type of crystal particles under the actual environmental temperature and humidity cycle condition of the crystal particle to be predicted, M′ represents the critical caking cycle of the crystal particle to be predicted, and N1 and M′ are an integer not less than 1, respectively;
in response to matching the CHS crystal bridge growth model database based on the actual ambient temperature and the equivalent particle radius of the crystal particle to be predicted, obtaining a target same type of crystal particles with a same environmental temperature and equivalent particle radius as the actual environmental temperature and equivalent particle radius, respectively, and determining the critical caking cycle of the crystal particle to be predicted through the second preset algorithm according to equation (b):

OG Complex Work Unit Math
wherein,

OG Complex Work Unit Math
in the equation (b), VRH2 represents a moisture absorption capacity of the target same type of crystal particles under a high humidity condition in a corresponding humidity cycle condition; VRH3 represents a moisture absorption capacity of the target same type of crystal particles under a high humidity condition in the actual humidity cycle condition, wherein a low humidity condition in the corresponding humidity cycle condition is the same as a low humidity condition in the high humidity condition in the actual humidity cycle condition; VRH1 represents a moisture absorption capacity of the target same type of crystal particles under a low humidity condition in the corresponding humidity cycle condition; V1 represents a difference between the moisture absorption capacity of the target same type of crystal particles under the high humidity condition and the low humidity condition in the corresponding humidity cycle condition; V1′ represents a difference between the moisture absorption capacity of the target same type of crystal particles between the high humidity condition and the low humidity condition in the actual humidity cycle condition; N2 represents a reference critical caking cycle of the target same type of crystal particles in the corresponding humidity cycle condition; N2″ represents a reference critical caking cycle of the target same type of crystal particles in the actual humidity cycle condition, and N2 and N2″ are an integer not less than 1, respectively;
wherein the high humidity condition in the multiple humidity cycle conditions in the CHS crystal bridge growth model database is lower than a deliquescence point of the target same type of crystal particles such that the reference critical caking cycle is greater than once when a particle size of the target same type of crystal particles is less than 100 microns, the low humidity condition in the multiple humidity cycle conditions is less than the high humidity condition, and a humidity difference between the low humidity condition and the high humidity condition is greater than 20%;
wherein the reference critical caking cycle of the target same type of crystal particles with different equivalent particle radii under the multiple ambient temperatures and multiple humidity cycle conditions is obtained by:
loading the target same type of crystal particles into a caking mold and placing the caking mold in a box with a set temperature, setting a high humidity and low humidity in a high and low humidity cycle within the box being the same with the humidity cycle condition of the target same type of crystal particles, and setting a period of the high and low humidity cycle to 12-24 hours;
counting a time of the high and low humidity cycle, and performing a de-molding operation for a caking of the target same type of crystal particles in the caking mold;
during the de-molding operation, in response to the caking falling apart, determining that the caking of the target same type of crystal particles is not caked, and continuing to perform above cycle to a next cycle until the caking does not fall apart, and determining a count of cycles completed to prevent the caking from falling apart as a reference critical caking cycle of the target same type of crystal particles under a corresponding ambient temperature and humidity cycle condition.