| CPC G01L 9/0052 (2013.01) | 15 Claims |
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1. A semiconductor pressure sensor comprising:
a first semiconductor substrate;
a second semiconductor substrate joined to one surface of the first semiconductor substrate with an oxide film interposed therebetween; and
a first piezoresistance element and a second piezoresistance element provided in one surface of the second semiconductor substrate on a side opposite to the first semiconductor substrate, wherein
a first recess and a second recess surrounding the first recess are formed on the one surface of the first semiconductor substrate, a first cavity is formed as a space surrounded by the first recess and an other surface of the second semiconductor substrate, and a second cavity is formed as a space surrounded by the second recess and the other surface of the second semiconductor substrate,
the first piezoresistance element is formed at a position overlapping an outer periphery of the first cavity or a position inward of the outer periphery of the first cavity, in the one surface of the second semiconductor substrate, as seen in a direction perpendicular to the one surface of the second semiconductor substrate, and
the second piezoresistance element is formed at a position overlapping an outer periphery of the second cavity, a position overlapping an inner periphery of the second cavity, or a position inward of the outer periphery and outward of the inner periphery of the second cavity, in the one surface of the second semiconductor substrate, as seen in the direction perpendicular to the one surface of the second semiconductor substrate.
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