US 12,241,173 B2
Wafer shielding for prevention of lipseal plate-out
Gregory J. Kearns, West Linn, OR (US); Lee Peng Chua, Beaverton, OR (US); Jacob Kurtis Blickensderfer, Portland, OR (US); and Steven T. Mayer, Aurora, OR (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/754,345
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Sep. 30, 2020, PCT No. PCT/US2020/053518
§ 371(c)(1), (2) Date Mar. 30, 2022,
PCT Pub. No. WO2021/067419, PCT Pub. Date Apr. 8, 2021.
Claims priority of provisional application 62/911,029, filed on Oct. 4, 2019.
Prior Publication US 2022/0396894 A1, Dec. 15, 2022
Int. Cl. C25D 17/00 (2006.01); C25D 3/38 (2006.01); C25D 3/60 (2006.01); C25D 5/02 (2006.01); C25D 5/10 (2006.01); C25D 7/12 (2006.01); C25D 17/06 (2006.01); C25D 21/12 (2006.01); H01L 21/288 (2006.01)
CPC C25D 17/004 (2013.01) [C25D 3/38 (2013.01); C25D 3/60 (2013.01); C25D 5/022 (2013.01); C25D 5/10 (2013.01); C25D 7/12 (2013.01); C25D 17/002 (2013.01); C25D 17/008 (2013.01); C25D 17/06 (2013.01); C25D 21/12 (2013.01); H01L 21/2885 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A method of electrodepositing a metal onto a semiconductor substrate having a plurality of through-mask recessed features, while preventing or reducing deposition of the metal on a lipseal of an electroplating apparatus, the method comprising:
(a) electrodepositing a first metal into the through-mask recessed features of the semiconductor substrate in a first electroplating cell using a first lipseal; and
(b) electrodepositing a second metal into the through-mask recessed features after (a), in a second electroplating cell using a second lipseal having a larger inner diameter than the first lipseal, wherein the semiconductor substrate comprises a selected zone shielded from exposure to an electrolyte by the first lipseal but not by the second lipseal, such that the first metal is not electrodeposited in the selected zone and such that the second metal is allowed to be electrodeposited in the selected zone.