US 12,240,753 B2
Micro-electromechanical device having a soft magnetic material electrolessly deposited on a palladium layer coated metal beam
William J. Gallagher, Ardsley, NY (US); Eugene J. O'Sullivan, Nyack, NY (US); and Naigang Wang, Ossining, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Sep. 7, 2021, as Appl. No. 17/467,587.
Application 17/467,587 is a division of application No. 13/971,308, filed on Aug. 20, 2013, granted, now 11,174,159.
Application 13/971,308 is a continuation of application No. 13/796,496, filed on Mar. 12, 2013, granted, now 9,105,841, issued on Aug. 11, 2015.
Prior Publication US 2021/0395080 A1, Dec. 23, 2021
Int. Cl. B81C 1/00 (2006.01); B81B 3/00 (2006.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01); H10N 52/01 (2023.01); H01F 41/04 (2006.01); H01L 49/02 (2006.01)
CPC B81C 1/00373 (2013.01) [B81B 3/0021 (2013.01); B81C 1/00142 (2013.01); B81C 1/00706 (2013.01); H10N 50/01 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02); B81B 2201/038 (2013.01); B81B 2203/0118 (2013.01); B81C 2201/0188 (2013.01); H01F 41/046 (2013.01); H01L 28/10 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A micro-electromechanical device, comprising:
a wafer substrate;
a first support structure having a first profile formed on an upper surface of the wafer substrate and a second support structure having a second profile formed on the upper surface of the wafer substrate, the second support structure spaced a distance apart from the first support structure;
a first metal beam coupled to the first support structure to be suspended with respect to the wafer substrate; and
a second metal beam supported by the first metal beam;
a third metal beam supported by the second metal beam;
wherein each of the first, second and third metal beams are made of a metal that is non-reactive to electroless deposition, and each of the first, second and third metal beams include top, bottom and sides of a middle portion of the metal located between the first and second support structures are coated with a layer of palladium that is reactive to electroless deposition, and
a soft magnetic material coating the top, bottom and sides of the layer of the palladium located at the middle portion of each of the first, second, and third metal beams so as to completely encapsulate both the middle portion of the metal and the layer of palladium located at the middle portion, wherein the soft magnetic material includes a cobalt alloy,
wherein a first end of the first metal beam is attached to the first support structure and a second end of the first metal beam is attached to a first end of the second metal beam, wherein a second end of the second metal beam is attached to a first end of the third metal beam such that a combination of the first, second, and third metal beams defines a meandering shape profile that extends continuously from the first support structure to the second support structure, and wherein a second end of the third metal beam is attached to the second support structure such that first, second, and third metal beams are fixed to the wafer and are all suspended above the upper surface of the wafer substrate.