US 12,240,218 B2
Bonded assembly, and ceramic circuit substrate and semiconductor device using the same
Shota Yamamoto, Ota Tokyo (JP); Fumihiko Yoshimura, Yokosuka Kanagawa (JP); Seiichi Suenaga, Yokohama Kanagawa (JP); and Tomoyuki Oozeki, Kawasaki Kanagawa (JP)
Assigned to KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA MATERIALS CO., LTD., Yokohama (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA MATERIALS CO., LTD., Yokohama (JP)
Filed on Feb. 28, 2023, as Appl. No. 18/115,182.
Application 18/115,182 is a continuation of application No. PCT/JP2021/038511, filed on Oct. 19, 2021.
Claims priority of application No. 2020-175898 (JP), filed on Oct. 20, 2020.
Prior Publication US 2023/0202137 A1, Jun. 29, 2023
Int. Cl. B32B 7/12 (2006.01); B32B 15/04 (2006.01); B32B 15/20 (2006.01); C04B 37/02 (2006.01); H01L 23/373 (2006.01)
CPC B32B 7/12 (2013.01) [B32B 15/04 (2013.01); B32B 15/20 (2013.01); C04B 37/023 (2013.01); H01L 23/3735 (2013.01); B32B 2250/40 (2013.01); B32B 2255/205 (2013.01); B32B 2307/732 (2013.01); B32B 2457/08 (2013.01); C04B 2237/125 (2013.01); C04B 2237/368 (2013.01); C04B 2237/407 (2013.01); C04B 2237/704 (2013.01); C04B 2237/706 (2013.01); C04B 2237/708 (2013.01); C04B 2237/74 (2013.01); Y10T 428/12458 (2015.01)] 10 Claims
OG exemplary drawing
 
1. A bonded assembly, comprising a metal plate and a ceramic substrate bonded to each other through a bonding layer containing Ag, wherein
the bonding layer contains Sn or In, and a concentration of Sn or In in a measurement region is in a range of 1 at % or more and 6 at % or less,
the measurement region that is formed in a cross section formed by a thickness direction of the bonding layer and an orthogonal direction thereto, and that has a size of a length in the thickness direction of the bonding layer×a length of 200 μm in the orthogonal direction, comprises a Ag-rich region having a Ag concentration of 60 at % or more that has an area of 70% or less of the area of the measurement region, and Ag-poor regions each having a Ag concentration of 50 at % or less, and
at least one region where the Ag-poor regions are linked to each other in the thickness direction of the bonding layer is present in a triple continuous measurement region where three measurement regions are continuously linked to each other in the orthogonal region.