US 12,240,012 B2
Coating film forming method, coating film forming apparatus, and storage medium
Yusaku Hashimoto, Koshi (JP); Kodai Yagi, Koshi (JP); and Yuki Matsutake, Koshi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jan. 6, 2023, as Appl. No. 18/150,818.
Claims priority of application No. 2022-002530 (JP), filed on Jan. 11, 2022.
Prior Publication US 2023/0219116 A1, Jul. 13, 2023
Int. Cl. B05D 3/04 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01)
CPC B05D 3/0473 (2013.01) [H01L 21/0206 (2013.01); H01L 21/0276 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A coating film forming method comprising:
coating a coating liquid by supplying the coating liquid to a central portion of a front surface of a substrate and rotating the substrate to spread the coating liquid to a peripheral edge portion of the substrate to form a coating film;
supplying a high-temperature gas having a temperature higher than a temperature of the substrate supplied with the coating liquid to a portion of an exposed region of a rear surface of the rotating substrate;
adjusting film thickness distribution of the coating film in a plane of the substrate by rotating the substrate at a first rotation speed;
drying, after the adjusting the film thickness distribution, the coating film by adjusting a film thickness of the coating film in an entire plane of the substrate by rotating the substrate at a second rotation speed different from the first rotation speed; and
cleaning, after the drying, the rear surface of the substrate by supplying a cleaning liquid to the exposed region of the rear surface of the rotating substrate,
wherein:
a period in which the drying of the coating film is performed includes a period in which the supplying of the high-temperature gas to the substrate is stopped,
the supplying the high-temperature gas includes ejecting the high-temperature gas from a first ejection port provided in a gas nozzle,
the cleaning includes ejecting the cleaning liquid from a second ejection port provided in a cleaning nozzle, and
a first contact region which is a contact region of the high-temperature gas on the rear surface of the substrate when the high-temperature gas is ejected from the first ejection port is located on a downstream side in a rotating direction of the substrate with respect to a second contact region which is a contact region of the cleaning liquid on the rear surface of the substrate when the cleaning liquid is ejected from the second ejection port.