| CPC A61N 1/0543 (2013.01) [A61N 1/08 (2013.01); A61N 1/36046 (2013.01); H01L 27/14679 (2013.01)] | 20 Claims |

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1. A retinal prosthesis, comprising:
a vertically integrated photosensitive junction field-effect-transistor (Photo-JFET) etched from a silicon substrate doped to form a stack of N—P—N or P—N—P layers, forming a silicon mesa pillar and having an outer wall which is coated with a dielectric layer of SiO2, which induces an inversion layer along a vertical direction on the outer wall of the silicon mesa; and
a neural stimulating electrode.
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