US 11,917,929 B1
Edge majorana quasiparticles and qubits
Wei Pan, San Ramon, CA (US)
Assigned to National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (US)
Filed by National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (US)
Filed on Dec. 13, 2021, as Appl. No. 17/548,890.
Int. Cl. H10N 60/01 (2023.01); G06N 10/40 (2022.01); H10N 60/12 (2023.01); H10N 60/80 (2023.01); H10N 60/85 (2023.01)
CPC H10N 60/0912 (2023.02) [G06N 10/40 (2022.01); H10N 60/12 (2023.02); H10N 60/805 (2023.02); H10N 60/855 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a multilayer structure, wherein the multilayer structure comprises a top, a bottom that is opposite the top, and a side that extends from the bottom to the top of the multilayer structure, and further wherein the multilayer structure comprises, in order and from the bottom to the top of the multilayer structure:
a substrate;
a first layer of aluminum antimonide;
a layer of indium arsenide;
a layer of gallium antimonide;
a second layer of aluminum antimonide;
placing a carbon nanotube along the side of the multilayer structure in a direction that extends between the bottom and the top of the multilayer structure, wherein the carbon nanotube is placed across at least a portion of the substrate, the first layer of aluminum antimonide, the layer of indium arsenide, the layer of gallium antimonide, and the second layer of aluminum antimonide;
depositing a layer of aluminum on the side of the multilayer structure such that the multilayer structure includes the layer of aluminum;
removing the carbon nanotube such that a gap is formed in the layer of aluminum along the side of the multilayer structure; and
depositing a dielectric layer and metal layer on top of the second layer of aluminum antimonide such that the multilayer structure further comprises the dielectric layer and the metal layer.