US 11,917,834 B2
Integrated assemblies and methods of forming integrated assemblies
Durai Vishak Nirmal Ramaswamy, Boise, ID (US); Marcello Mariani, Milan (IT); and Giorgio Servalli, Fara Gera d'Adda (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 20, 2021, as Appl. No. 17/381,040.
Prior Publication US 2023/0027308 A1, Jan. 26, 2023
Int. Cl. G11C 11/22 (2006.01); H10B 53/50 (2023.01); H10B 53/10 (2023.01); H10B 53/30 (2023.01); H10B 53/40 (2023.01)
CPC H10B 53/50 (2023.02) [G11C 11/221 (2013.01); H10B 53/10 (2023.02); H10B 53/30 (2023.02); H10B 53/40 (2023.02)] 33 Claims
OG exemplary drawing
 
1. An integrated assembly, comprising:
a first bottom electrode and a second bottom electrode; the first and second bottom electrodes being adjacent to one another, with an intervening region being directly between the first and second bottom electrodes;
capacitor-insulative-material adjacent the first and second bottom electrodes; the capacitor-insulative-material substantially not being within the intervening region; and
top-electrode-material adjacent the capacitor-insulative-material.