US 11,917,832 B2
Ferroelectric tunnel junction devices with metal-FE interface layer and methods for forming the same
Han-Jong Chia, Hsinchu (TW); and Mauricio Manfrini, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Feb. 13, 2023, as Appl. No. 18/109,161.
Application 18/109,161 is a division of application No. 17/228,555, filed on Apr. 12, 2021, granted, now 11,581,335.
Claims priority of provisional application 63/042,600, filed on Jun. 23, 2020.
Prior Publication US 2023/0209837 A1, Jun. 29, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 27/11 (2006.01); H10B 51/30 (2023.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01)
CPC H10B 51/30 (2023.02) [H01L 29/40111 (2019.08); H01L 29/6684 (2013.01); H01L 29/7851 (2013.01); H01L 29/78391 (2014.09)] 20 Claims
OG exemplary drawing
 
1. A method of forming a memory cell, further comprising:
depositing an interface metal layer over a ferroelectric (FE) layer, wherein the interface metal layer is configured to induce a formation of an orthorhombic phase in the FE layer; and
depositing a top electrode layer over the interface metal layer.