CPC H04N 25/46 (2023.01) [H04N 25/75 (2023.01)] | 19 Claims |
1. An image sensor comprising:
a first photoelectric conversion unit that photoelectrically converts light which has transmitted through a first microlens;
a second photoelectric conversion unit that photoelectrically converts light which has transmitted through a second microlens;
a first transfer transistor that transfers a charge obtained through photoelectric conversion by the first photoelectric conversion unit;
a second transfer transistor that transfers a charge obtained through photoelectric conversion by the second photoelectric conversion unit;
a first output transistor having a first gate;
a second output transistor having a second gate;
a first connection transistor that connects a drain of the first transfer transistor to the first gate of the first output transistor; and
a second connection transistor that connects a drain of the second transfer transistor to the second gate of the second output transistor, wherein
the first photoelectric conversion unit, the first transfer transistor, the first output transistor, and the first connection transistor are included in a first pixel, and
the second photoelectric conversion unit, the second transfer transistor, the second output transistor, and the second connection transistor are included in a second pixel.
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