CPC H01S 5/423 (2013.01) [H01S 5/0421 (2013.01); H01S 5/04256 (2019.08); H01S 5/18361 (2013.01); H01S 5/0021 (2013.01); H01S 5/0042 (2013.01); H01S 5/0282 (2013.01); H01S 5/04254 (2019.08); H01S 5/18308 (2013.01); H01S 5/18311 (2013.01); H01S 5/18313 (2013.01); H01S 5/18333 (2013.01); H01S 5/18341 (2013.01); H01S 5/18369 (2013.01); H01S 5/187 (2013.01); H01S 5/2063 (2013.01); H01S 5/343 (2013.01); H01S 2301/176 (2013.01)] | 20 Claims |
1. A vertical cavity surface emitting laser (VCSEL) array, comprising:
a first set of VCSELs; and
a second set of VCSELs,
wherein the second set of VCSELs includes at least one degraded VCSEL, the at least one degraded VCSEL comprising one or more of:
a central current blocking implant, having an implant width less than a width of an active region of the degraded VCSEL, positioned substantially centrally with respect to a current confinement aperture of the degraded VCSEL,
an etched surface extending around dielectric via openings of the degraded VCSEL and to a depth approximately at a top surface of a top mirror of the degraded VCSEL,
or
a reduced via, etched through a dielectric passivation/mirror layer of the degraded VCSEL to expose a metal layer, the reduced via having a reduced size relative to other vias of the VCSELs in the first set of VCSELs;
wherein the first set of VCSELs and the second set of VCSELs are interleaved with each other to form a two-dimensional regular pattern of VCSELs; and
wherein the second set of VCSELs forms a random pattern of VCSELs within the two-dimensional regular pattern of VCSELs.
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