US 11,916,356 B2
Modified emitter array
Vincent V. Wong, Los Altos, CA (US); Jay A. Skidmore, San Jose, CA (US); and Matthew Glenn Peters, Menlo Park, CA (US)
Assigned to Lumentum Operations LLC, San Jose, CA (US)
Filed by Lumentum Operations LLC, San Jose, CA (US)
Filed on May 6, 2022, as Appl. No. 17/662,268.
Application 17/662,268 is a division of application No. 16/241,258, filed on Jan. 7, 2019, abandoned.
Claims priority of provisional application 62/622,465, filed on Jan. 26, 2018.
Claims priority of provisional application 62/681,573, filed on Jun. 6, 2018.
Prior Publication US 2022/0263294 A1, Aug. 18, 2022
Int. Cl. H01S 5/42 (2006.01); H01S 5/042 (2006.01); H01S 5/183 (2006.01); H01S 5/00 (2006.01); H01S 5/028 (2006.01); H01S 5/187 (2006.01); H01S 5/20 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/423 (2013.01) [H01S 5/0421 (2013.01); H01S 5/04256 (2019.08); H01S 5/18361 (2013.01); H01S 5/0021 (2013.01); H01S 5/0042 (2013.01); H01S 5/0282 (2013.01); H01S 5/04254 (2019.08); H01S 5/18308 (2013.01); H01S 5/18311 (2013.01); H01S 5/18313 (2013.01); H01S 5/18333 (2013.01); H01S 5/18341 (2013.01); H01S 5/18369 (2013.01); H01S 5/187 (2013.01); H01S 5/2063 (2013.01); H01S 5/343 (2013.01); H01S 2301/176 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A vertical cavity surface emitting laser (VCSEL) array, comprising:
a first set of VCSELs; and
a second set of VCSELs,
wherein the second set of VCSELs includes at least one degraded VCSEL, the at least one degraded VCSEL comprising one or more of:
a central current blocking implant, having an implant width less than a width of an active region of the degraded VCSEL, positioned substantially centrally with respect to a current confinement aperture of the degraded VCSEL,
an etched surface extending around dielectric via openings of the degraded VCSEL and to a depth approximately at a top surface of a top mirror of the degraded VCSEL,
or
a reduced via, etched through a dielectric passivation/mirror layer of the degraded VCSEL to expose a metal layer, the reduced via having a reduced size relative to other vias of the VCSELs in the first set of VCSELs;
wherein the first set of VCSELs and the second set of VCSELs are interleaved with each other to form a two-dimensional regular pattern of VCSELs; and
wherein the second set of VCSELs forms a random pattern of VCSELs within the two-dimensional regular pattern of VCSELs.