US 11,916,227 B2
Multilayer body and method for producing same
Mikito Mamiya, Tsukuba (JP); and Junji Akimoto, Tsukuba (JP)
Assigned to NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, (JP)
Appl. No. 16/971,322
Filed by NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo (JP)
PCT Filed Feb. 22, 2019, PCT No. PCT/JP2019/006898
§ 371(c)(1), (2) Date Aug. 20, 2020,
PCT Pub. No. WO2019/163967, PCT Pub. Date Aug. 29, 2019.
Claims priority of application No. 2018-031293 (JP), filed on Feb. 23, 2018.
Prior Publication US 2021/0013495 A1, Jan. 14, 2021
Int. Cl. H01M 4/36 (2006.01); H01M 4/04 (2006.01); H01M 4/13 (2010.01); H01M 4/48 (2010.01); H01M 10/0525 (2010.01); H01M 4/131 (2010.01); H01M 4/1391 (2010.01); H01M 4/62 (2006.01); H01G 11/26 (2013.01); H01G 11/50 (2013.01); H01M 4/02 (2006.01)
CPC H01M 4/366 (2013.01) [H01M 4/0423 (2013.01); H01M 4/0426 (2013.01); H01M 4/131 (2013.01); H01M 4/1391 (2013.01); H01M 4/483 (2013.01); H01M 4/624 (2013.01); H01M 10/0525 (2013.01); H01G 11/26 (2013.01); H01G 11/50 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A multilayer body, comprising:
a conductive substrate; and
a composite layer that is provided on the conductive substrate and includes a plurality of particles of silicon oxide having an average particle diameter of 0.2 μm or less and a conductive substance present in gaps between the plurality of particles of silicon oxide, and
further comprising:
a conductive layer that is provided on the composite layer, contains the conductive substance, does not contain the particles of silicon oxide, and is at least several micrometers thick, and
wherein the composite layer and the conductive layer are planar layers.