CPC H01M 10/4235 (2013.01) [C01G 25/006 (2013.01); C04B 35/44 (2013.01); C04B 35/486 (2013.01); C04B 35/495 (2013.01); C04B 35/62218 (2013.01); C04B 35/6455 (2013.01); H01M 4/0447 (2013.01); H01M 10/0525 (2013.01); H01M 10/0562 (2013.01); H01M 50/431 (2021.01); H01M 50/46 (2021.01); H01M 50/489 (2021.01); C01P 2002/30 (2013.01); C01P 2002/72 (2013.01); C01P 2004/02 (2013.01); C01P 2004/03 (2013.01); C01P 2004/52 (2013.01); C01P 2004/61 (2013.01); C01P 2006/16 (2013.01); C01P 2006/40 (2013.01); C01P 2006/90 (2013.01); C04B 2235/3203 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3255 (2013.01); C04B 2235/3839 (2013.01); C04B 2235/443 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5463 (2013.01); C04B 2235/764 (2013.01); C04B 2235/786 (2013.01); C04B 2235/963 (2013.01); H01M 50/403 (2021.01); H01M 50/406 (2021.01); H01M 50/491 (2021.01); H01M 2300/0071 (2013.01)] | 16 Claims |
1. A method for reducing the number of defects on a single layer sintered lithium-stuffed garnet thin film, the method comprising the following steps in the following order:
providing a single layer sintered lithium-stuffed garnet thin film in a first step;
heating the top and/or bottom surfaces of the sintered lithium-stuffed garnet thin film to 700° C. to 1200° C. for 1 to 10 hours in an inert or reducing atmosphere in a second step;
wherein the inert or reducing atmosphere comprises a member selected from the group consisting of Ar, Ar/H2, N2, or combinations thereof; and
cooling the sintered lithium-stuffed garnet thin film in a third step in the inert or reducing atmosphere;
wherein the single layer sintered lithium-stuffed garnet thin film is not in contact with an unsintered lithium-stuffed garnet thin film.
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