US 11,916,169 B2
Active matrix LED array
Andrea Pinos, Plymouth (GB); and Samir Mezouari, Plymouth (GB)
Assigned to Plessey Semiconductors Limited, Plymouth (GB)
Appl. No. 17/413,873
Filed by PLESSEY SEMICONDUCTORS LIMITED, Plymouth (GB)
PCT Filed Dec. 12, 2019, PCT No. PCT/EP2019/084933
§ 371(c)(1), (2) Date Jun. 14, 2021,
PCT Pub. No. WO2020/120692, PCT Pub. Date Jun. 18, 2020.
Claims priority of application No. 1820449 (GB), filed on Dec. 14, 2018.
Prior Publication US 2022/0059726 A1, Feb. 24, 2022
Int. Cl. H01L 33/32 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/32 (2013.01) [H01L 27/156 (2013.01); H01L 33/0075 (2013.01); H01L 33/62 (2013.01); H01L 2933/0066 (2013.01)] 24 Claims
OG exemplary drawing
 
1. An active matrix LED array precursor comprising:
a common first semiconducting layer comprising a substantially undoped Group III-nitride;
a plurality of transistor-driven LED precursors, each transistor-driven LED precursor comprising:
a monolithic light emitting diode (LED) structure comprising a plurality of III-nitride semiconducting layers, each monolithic LED structure formed on a portion of the common semiconducting layer;
a barrier semiconducting layer formed on a portion of the common semiconducting layer encircling the LED structure configured to induce a two-dimensional electron channel layer at the interface between the common semiconducting layer and the barrier semiconducting layer; and
a gate contact formed over a portion of the two-dimensional electron channel layer, the gate contact encircling the LED structure; and
a common source contact configured to form an ohmic contact to each two-dimensional electron channel layer such that a high electron mobility transistor is provided between the common source contact and each monolithic LED structure for driving each LED structure.