US 11,916,166 B2
Optoelectronic device comprising a current spreading layer
Roland Heinrich Enzmann, Penang (MY); Christian Mueller, Deuerling (DE); Stefan Barthel, Regensburg (DE); Vanessa Eichinger, Wenzenbach (DE); Marc Christian Nenstiel, Regensburg (DE); and Lorenzo Zini, Regensburg (DE)
Assigned to Osram OLED GmbH, Regensburg (DE)
Appl. No. 17/053,805
Filed by Osram OLED GmbH, Regensburg (DE)
PCT Filed May 8, 2019, PCT No. PCT/EP2019/061800
§ 371(c)(1), (2) Date Nov. 9, 2020,
PCT Pub. No. WO2019/215217, PCT Pub. Date Nov. 14, 2019.
Claims priority of application No. 10 2018 111 198.3 (DE), filed on May 9, 2018.
Prior Publication US 2021/0265525 A1, Aug. 26, 2021
Int. Cl. H01L 33/14 (2010.01); H01L 25/16 (2023.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 33/64 (2010.01)
CPC H01L 33/14 (2013.01) [H01L 25/167 (2013.01); H01L 33/005 (2013.01); H01L 33/382 (2013.01); H01L 33/62 (2013.01); H01L 33/642 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for manufacturing an optoelectronic device comprising:
forming an optoelectronic semiconductor chip configured to emit electromagnetic radiation, wherein the optoelectronic semiconductor chip comprises:
a first semiconductor layer having a first conductivity type;
a second semiconductor layer having a second conductivity type;
a first current spreading layer and a second current spreading layer; and
a plurality of electrical contact elements, wherein the first semiconductor layer is arranged over the second semiconductor layer;
wherein electromagnetic radiation emitted by the optoelectronic semiconductor chip is output via a first main surface of the first semiconductor layer;
wherein the first current spreading layer is arranged on a side of the second semiconductor layer facing away from the first semiconductor layer;
wherein the plurality of electrical contact elements is configured to electrically connect the first semiconductor layer to the current spreading layer;
wherein the plurality of electrical contact elements comprises a first electrical contact element and a second electrical contact element, wherein the second current spreading layer is electrically connected to the second semiconductor layer; and
forming an insulating layer between the first electrical contact element and the second current spreading layer and between the second electrical contact element and the second current spreading layer, wherein a first insulating layer is formed adjacent to the first contact element and comprises a first laterally measured layer thickness and a second insulating layer is formed adjacent to the second contact element and comprises a second laterally measured layer thickness, and wherein the first laterally measured layer thickness is different from the second laterally measured layer thickness so that a distance between the first contact element to the second current spreading layer is different from the distance between the second contact element to the second current spreading layer.