US 11,916,164 B2
Method for manufacturing light-emitting element and method for removing hydrogen from light-emitting element
Yoshiki Saito, Kiyosu (JP); Shinya Boyama, Kiyosu (JP); Shinichi Matsui, Kiyosu (JP); Hiroshi Miwa, Kiyosu (JP); Kengo Nagata, Kiyosu (JP); Tetsuya Takeuchi, Aichi-ken (JP); and Hisanori Ishiguro, Aichi-ken (JP)
Assigned to TOYODA GOSEI CO., LTD., Kiyosu (JP); and MEIJO UNIVERSITY, Aichi-Ken (JP)
Filed by TOYODA GOSEI CO., LTD., Kiyosu (JP); and MEIJO UNIVERSITY, Nagoya (JP)
Filed on Dec. 29, 2021, as Appl. No. 17/564,768.
Claims priority of application No. 2021-006743 (JP), filed on Jan. 19, 2021.
Prior Publication US 2022/0231189 A1, Jul. 21, 2022
Int. Cl. H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/0095 (2013.01) [H01L 33/007 (2013.01); H01L 33/145 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method for manufacturing a light-emitting element, the method comprising:
providing the light-emitting element that comprises a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer comprising AlGaInN including Mg as an acceptor; and
removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element,
wherein the removing of hydrogen in the p-type layer from the light-emitting element is performed in a N2+O2 atmosphere at not less than 500° C.