US 11,916,144 B2
Semiconductor device and manufacturing method thereof
Georgios Vellianitis, Heverlee (BE); Chun-Chieh Lu, Taipei (TW); Sai-Hooi Yeong, Zhubei (TW); and Mauricio Manfrini, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Aug. 9, 2022, as Appl. No. 17/883,699.
Application 17/883,699 is a division of application No. 17/123,982, filed on Dec. 16, 2020.
Claims priority of provisional application 63/040,681, filed on Jun. 18, 2020.
Prior Publication US 2022/0384658 A1, Dec. 1, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/447 (2006.01); H01L 21/383 (2006.01); H01L 29/49 (2006.01); H01L 27/12 (2006.01)
CPC H01L 29/78391 (2014.09) [H01L 21/383 (2013.01); H01L 21/447 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 27/1207 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
forming a semiconductor layer and forming a dielectric layer;
performing a pressurized treatment to transform the semiconductor layer into a low-doping semiconductor layer and transform the dielectric layer into a crystalline ferroelectric layer;
forming a gate layer;
forming an insulating layer over the gate layer, the crystalline ferroelectric layer and the low-doping semiconductor layer;
forming contact openings in the insulating layer exposing portions of the low-doping semiconductor layer; and
forming source and drain terminals on the low-doping semiconductor layer.