US 11,916,136 B2
Lateral bipolar junction transistors including a graded silicon-germanium intrinsic base
Arkadiusz Malinowski, Dresden (DE); Alexander Derrickson, Saratoga Springs, NY (US); and Judson Holt, Ballston Lake, NY (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on May 7, 2022, as Appl. No. 17/739,092.
Claims priority of provisional application 63/313,993, filed on Feb. 25, 2022.
Prior Publication US 2023/0275145 A1, Aug. 31, 2023
Int. Cl. H01L 29/73 (2006.01); H01L 29/735 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/735 (2013.01) [H01L 21/26586 (2013.01); H01L 21/324 (2013.01); H01L 29/165 (2013.01); H01L 29/6625 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure for a lateral bipolar junction transistor, the structure comprising:
a semiconductor substrate;
a first terminal including a first raised semiconductor layer on the semiconductor substrate;
a second terminal including a second raised semiconductor layer on the semiconductor substrate; and
an intrinsic base including a first portion, a second portion, and a third portion, the first portion of the intrinsic base positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal, the first portion of the intrinsic base positioned in a vertical direction between the third portion of the intrinsic base and the second portion of the intrinsic base, the second portion of the intrinsic base positioned in the vertical direction between the first portion of the intrinsic base and the semiconductor substrate, the first portion of the intrinsic base comprising silicon-germanium with a first germanium concentration that is graded in the lateral direction, and the third portion of the intrinsic base comprising silicon-germanium with a second germanium concentration that is greater than a maximum value of the first germanium concentration.