US 11,916,129 B2
Methods of forming diodes
Gurtej S. Sandhu, Boise, ID (US); and Chandra Mouli, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 15, 2021, as Appl. No. 17/348,718.
Application 17/348,718 is a continuation of application No. 15/354,572, filed on Nov. 17, 2016, abandoned.
Application 15/354,572 is a continuation of application No. 14/959,884, filed on Dec. 4, 2015, granted, now 9,520,478, issued on Dec. 13, 2016.
Application 14/959,884 is a continuation of application No. 14/543,349, filed on Nov. 17, 2014, granted, now 9,397,187, issued on Jul. 19, 2016.
Application 14/543,349 is a continuation of application No. 13/599,746, filed on Aug. 30, 2012, granted, now 8,889,538, issued on Nov. 18, 2014.
Application 13/599,746 is a continuation of application No. 12/953,776, filed on Nov. 24, 2010, granted, now 8,273,643, issued on Sep. 25, 2012.
Application 12/953,776 is a continuation of application No. 12/141,265, filed on Jun. 18, 2008, granted, now 7,858,506, issued on Dec. 28, 2010.
Prior Publication US 2021/0313445 A1, Oct. 7, 2021
Int. Cl. H01L 29/66 (2006.01); B82Y 10/00 (2011.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H10N 70/00 (2023.01); H01L 29/08 (2006.01); H01L 29/872 (2006.01); H01L 21/28 (2006.01); H01L 21/283 (2006.01); H01L 29/88 (2006.01); H01L 49/02 (2006.01)
CPC H01L 29/66151 (2013.01) [B82Y 10/00 (2013.01); H01L 21/28 (2013.01); H01L 21/283 (2013.01); H01L 29/068 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/0676 (2013.01); H01L 29/08 (2013.01); H01L 29/417 (2013.01); H01L 29/66143 (2013.01); H01L 29/872 (2013.01); H01L 29/88 (2013.01); H10N 70/00 (2023.02); H01L 28/90 (2013.01)] 10 Claims
OG exemplary drawing
 
6. A method for forming a diode construction, the method comprising:
forming insulative material over a base;
patterning the insulative material to form a first opening extending through the insulative material to the base;
forming spacer material within opening;
patterning the spacer material into a pair of spacers defining a second opening having width in at least one cross section narrower than a width of the first opening;
forming electrically conductive material within the second opening, upon the base, and between the spacers;
removing the spacers to form third and fourth openings about the electrically conductive material;
depositing one or more layers within the third and fourth openings and over the insulative material, over the base, and over the electrically conductive material to form an intermediate diode structure, wherein the intermediate diode structure consists essentially of one or more of aluminum nitride, aluminum oxide, hafnium oxide, magnesium oxide, niobium oxide, silicon nitride, silicon oxide, tantalum oxide, titanium oxide, yttrium oxide, and/or zirconium oxide; and
forming an electrode over the intermediate diode structure to formation of the diode construction.