US 11,916,126 B2
Semiconductor device and manufacturing method thereof
Hui-Hsin Hsu, Tainan (TW); Huan-Chi Ma, Tainan (TW); Chien-Wen Yu, Kaohsiung (TW); Shih-Min Chou, Tainan (TW); Nien-Ting Ho, Tainan (TW); and Ti-Bin Chen, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Nov. 18, 2022, as Appl. No. 17/989,710.
Application 17/989,710 is a continuation of application No. 17/353,830, filed on Jun. 22, 2021, granted, now 11,538,917.
Claims priority of application No. 202110570332.3 (CN), filed on May 25, 2021.
Prior Publication US 2023/0078993 A1, Mar. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/49 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/4966 (2013.01) [H01L 29/401 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate; and
a gate structure disposed on the substrate, wherein the gate structure comprises:
a titanium nitride barrier layer;
a titanium aluminide layer disposed on the titanium nitride barrier layer; and
a middle layer disposed between the titanium aluminide layer and the titanium nitride barrier layer, wherein the middle layer is directly connected with the titanium aluminide layer and the titanium nitride barrier layer, and the middle layer comprises titanium and nitrogen,
wherein a concentration of nitrogen in the middle layer is gradually decreased in a vertical direction towards an interface between the middle layer and the titanium aluminide layer.