US 11,916,108 B2
Semiconductor devices and methods of forming the same
Cheng-Tien Wan, Hsin-Chu (TW); and Ming-Cheng Lee, Hsin-Chu (TW)
Assigned to MediaTek Inc., Hsin-Chu (TW)
Filed by MediaTek Inc., Hsin-Chu (TW)
Filed on Jan. 30, 2023, as Appl. No. 18/161,181.
Application 18/161,181 is a division of application No. 17/513,819, filed on Oct. 28, 2021, granted, now 11,600,700.
Application 17/513,819 is a division of application No. 16/590,053, filed on Oct. 1, 2019, granted, now 11,189,694.
Claims priority of provisional application 62/751,753, filed on Oct. 29, 2018.
Prior Publication US 2023/0178607 A1, Jun. 8, 2023
Int. Cl. H01L 21/8238 (2006.01); H01L 29/08 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0847 (2013.01) [H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0924 (2013.01); H01L 29/0673 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor fin over a substrate;
a gate structure along sidewalls and a top surface of the semiconductor fin, wherein the gate structure covers a first portion of the semiconductor fin;
a source/drain feature adjacent to the gate structure; and
a source/drain contact connected to the source/drain feature, wherein the source/drain contact extends downwards to a position that is lower than a top surface of the first portion of the semiconductor fin,
wherein the source/drain feature extends on a bottom and sides of the source/drain contact,
wherein the source/drain contact has an upper portion and a lower portion wider than the upper portion.