US 11,916,059 B2
Electronic device
Andre Schmenn, Sachsenkam (DE); Stefan Pompl, Landshut (DE); Damian Sojka, Regensburg (DE); and Katharina Umminger, Wenzenbach (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Aug. 25, 2021, as Appl. No. 17/411,060.
Application 16/783,188 is a division of application No. 15/719,599, filed on Sep. 29, 2017, granted, now 10,622,346.
Application 17/411,060 is a continuation of application No. 16/783,188, filed on Feb. 6, 2020, granted, now 11,127,733.
Claims priority of application No. 10 2016 118 709.7 (DE), filed on Oct. 4, 2016.
Prior Publication US 2022/0045046 A1, Feb. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/60 (2006.01); H01L 27/02 (2006.01); H01L 21/78 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 25/00 (2006.01); H01L 29/74 (2006.01); H02H 9/04 (2006.01); H01L 27/07 (2006.01)
CPC H01L 27/0248 (2013.01) [H01L 21/78 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 23/60 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/97 (2013.01); H01L 25/072 (2013.01); H01L 25/50 (2013.01); H01L 27/0255 (2013.01); H01L 27/0262 (2013.01); H01L 27/0292 (2013.01); H01L 29/7416 (2013.01); H02H 9/04 (2013.01); H01L 27/0744 (2013.01); H01L 29/74 (2013.01); H01L 2224/214 (2013.01); H01L 2224/95001 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/30205 (2013.01)] 18 Claims
OG exemplary drawing
 
1. An electrostatic discharge protection device comprising:
a first vertically integrated electrostatic discharge protection structure comprising a first semiconductor portion, a first contact region disposed on a first side of the first semiconductor portion and a first terminal exposed on a second side of the first semiconductor portion opposite the first side of the first semiconductor portion;
a second vertically integrated electrostatic discharge protection structure comprising a second semiconductor portion, a second contact region disposed on a first side of the second semiconductor portion and a second terminal exposed on a second side of the second semiconductor portion opposite the first side of the second semiconductor portion;
an electrical connection layer, wherein the first vertically integrated electrostatic discharge protection structure and the second vertically integrated electrostatic discharge protection structure are disposed on the electrical connection layer laterally separated from each other and are electrically connected with each other via the electrical connection layer;
wherein the electrical connection layer is mounted on a support carrier.