US 11,916,045 B2
3D semiconductor device and structure with metal layers
Zvi Or-Bach, Haifa (IL); and Brian Cronquist, Klamath Falls, OR (US)
Assigned to Monolithic 3D Inc., Klamath Falls, OR (US)
Filed by Monolithic 3D Inc., Klamath Falls, OR (US)
Filed on Aug. 21, 2023, as Appl. No. 18/236,325.
Application 18/236,325 is a continuation in part of application No. 18/214,524, filed on Jun. 27, 2023.
Application 18/214,524 is a continuation in part of application No. 18/141,415, filed on Apr. 29, 2023, granted, now 11,784,169.
Application 18/141,415 is a continuation in part of application No. 18/105,826, filed on Feb. 4, 2023, granted, now 11,676,945, issued on Jun. 13, 2023.
Application 18/105,826 is a continuation in part of application No. 17/986,831, filed on Nov. 14, 2022, granted, now 11,605,616, issued on Mar. 14, 2023.
Application 17/986,831 is a continuation in part of application No. 17/882,607, filed on Aug. 8, 2022, granted, now 11,532,599, issued on Dec. 20, 2022.
Application 17/882,607 is a continuation in part of application No. 17/750,338, filed on May 21, 2022, granted, now 11,450,646, issued on Sep. 20, 2022.
Application 17/750,338 is a continuation in part of application No. 17/680,297, filed on Feb. 25, 2022, granted, now 11,424,222, issued on Aug. 23, 2022.
Application 17/680,297 is a continuation in part of application No. 17/536,019, filed on Nov. 27, 2021, granted, now 11,309,292, issued on Apr. 19, 2022.
Application 17/536,019 is a continuation in part of application No. 17/334,928, filed on May 31, 2021, granted, now 11,217,565, issued on Apr. 19, 2022.
Application 17/334,928 is a continuation in part of application No. 17/195,517, filed on Mar. 8, 2021, granted, now 11,063,024, issued on Jul. 13, 2021.
Application 17/195,517 is a continuation in part of application No. 17/020,766, filed on Sep. 14, 2020, granted, now 11,018,116, issued on May 25, 2021.
Application 17/020,766 is a continuation in part of application No. 16/683,244, filed on Nov. 13, 2019, granted, now 10,811,395, issued on Oct. 20, 2020.
Application 16/683,244 is a continuation in part of application No. 16/409,840, filed on May 12, 2019, granted, now 10,515,935, issued on Dec. 24, 2019.
Application 16/409,840 is a continuation in part of application No. 15/990,684, filed on May 28, 2018, granted, now 10,297,580, issued on May 21, 2019.
Application 15/990,684 is a continuation in part of application No. 15/721,955, filed on Oct. 1, 2017, granted, now 10,014,282, issued on Jul. 3, 2018.
Application 15/721,955 is a continuation in part of application No. 15/008,444, filed on Jan. 28, 2016, granted, now 9,786,636, issued on Oct. 10, 2017.
Application 15/008,444 is a continuation in part of application No. 14/541,452, filed on Nov. 14, 2014, granted, now 9,252,134, issued on Feb. 2, 2016.
Application 14/541,452 is a continuation of application No. 14/198,041, filed on Mar. 5, 2014, granted, now 8,921,970, issued on Dec. 30, 2014.
Application 14/198,041 is a continuation of application No. 13/726,091, filed on Dec. 22, 2012, granted, now 8,674,470, issued on Mar. 18, 2014.
Prior Publication US 2023/0395572 A1, Dec. 7, 2023
Int. Cl. H01L 27/06 (2006.01); H01L 25/065 (2023.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/485 (2006.01); H01L 23/522 (2006.01); H01L 29/66 (2006.01); H01L 21/74 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 21/743 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/485 (2013.01); H01L 23/522 (2013.01); H01L 24/25 (2013.01); H01L 25/50 (2013.01); H01L 27/0688 (2013.01); H01L 27/088 (2013.01); H01L 29/66621 (2013.01); H01L 27/092 (2013.01); H01L 29/4236 (2013.01); H01L 29/78 (2013.01); H01L 2224/24146 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/01104 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/2064 (2013.01); H01L 2924/351 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, the device comprising:
a first substrate;
a first metal layer disposed over said first substrate;
a second metal layer disposed over said first metal layer;
a first level comprising a plurality of transistors, said first level disposed over said second metal layer,
wherein said plurality of transistors each comprise single crystal silicon;
a third metal layer disposed over said first level;
a fourth metal layer disposed over said third metal layer,
wherein said fourth metal layer is aligned to said first metal layer with a less than 200 nm alignment error; and
a via disposed through said first level,
wherein said via has a diameter of less than 450 nm,
wherein said fourth metal layer provides a global power distribution, and
wherein said device comprises at least one power supply circuit.