US 11,916,032 B2
Microelectronic devices, related electronic systems, and methods of forming microelectronic devices
Fatma Arzum Simsek-Ege, Boise, ID (US); and Yuan He, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 27, 2021, as Appl. No. 17/562,453.
Prior Publication US 2023/0207505 A1, Jun. 29, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/18 (2023.01); H01L 25/00 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01); H10B 12/00 (2023.01)
CPC H01L 24/08 (2013.01) [G11C 11/4085 (2013.01); G11C 11/4091 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H10B 12/30 (2023.02); H10B 12/50 (2023.02); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01)] 36 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a first microelectronic device structure comprising:
multiplexers within a base structure;
a stack structure vertically overlying the base structure and comprising conductive structures vertically alternating with insulative structures;
a staircase structure within the stack structure; and
vertical stacks of memory cells, each vertical stack of memory cells individually comprising:
a vertical stack of capacitor structures;
transistor structures each individually neighboring a capacitor structure of the capacitor structures; and
a conductive pillar structure vertically extending through the transistor structures;
a second microelectronic device structure attached to the first microelectronic device structure, the second microelectronic device structure comprising a sub word line driver region comprising complementary metal-oxide-semiconductor (CMOS) circuits vertically overlying and within a horizontal area of the staircase structure; and
conductive contact structures vertically extending between steps of the staircase structure and the sub word line driver region.