US 11,916,001 B2
Semiconductor power module and power conversion device
Kozo Harada, Chiyoda-ku (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 16/961,774
Filed by Mitsubishi Electric Corporation, Chiyoda-ku (JP)
PCT Filed Dec. 13, 2018, PCT No. PCT/JP2018/045814
§ 371(c)(1), (2) Date Jul. 13, 2020,
PCT Pub. No. WO2019/176199, PCT Pub. Date Sep. 19, 2019.
Claims priority of application No. 2018-046377 (JP), filed on Mar. 14, 2018.
Prior Publication US 2020/0395278 A1, Dec. 17, 2020
Int. Cl. H01L 23/498 (2006.01); H01L 23/04 (2006.01); H01L 23/14 (2006.01); H01L 23/31 (2006.01); H02M 7/5387 (2007.01); H02P 27/08 (2006.01)
CPC H01L 23/49811 (2013.01) [H01L 23/041 (2013.01); H01L 23/142 (2013.01); H01L 23/3121 (2013.01); H01L 23/3135 (2013.01); H02M 7/53871 (2013.01); H02P 27/08 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor power module comprising:
a base plate;
an insulating substrate mounted on the base plate and including a conductive pattern;
a power semiconductor element mounted on the conductive pattern;
a case member mounted on the base plate so as to surround the insulating substrate;
a main terminal attached to the case member and electrically connecting to an outside;
a connected body to which the main terminal is connected, the connected body being connected to the conductive pattern; and
a sealing material introduced into the case member to seal the insulating substrate, the main terminal and the connected body, wherein
the main terminal and the connected body include
a receiving section provided in one of the main terminal and the connected body and receiving the other of the main terminal and the connected body, and
a slit portion formed in the receiving section so as to extend from a first end portion of the receiving section toward a second end portion of the receiving section, wherein the first end portion is located on a side close to the insulating substrate, and the second end portion is located opposite to the side close to the insulating substrate.